The Physics of Instabilities in Solid State Electron DevicesSpringer Science & Business Media, 31/01/1992 - 468 من الصفحات The past three decades have been a period where useful current and voltage instabilities in solids have progressed from exciting research problems to a wide variety of commercially available devices. Materials and electronics research has led to devices such as the tunnel (Esaki) diode, transferred electron (Gunn) diode, avalanche diodes, real-space transfer devices, and the like. These structures have proven to be very important in the generation, amplification, switching, and processing of microwave signals up to frequencies exceeding 100 GHz. In this treatise we focus on a detailed theoretical understanding of devices of the kind that can be made unstable against circuit oscillations, large amplitude switching events, and in some cases, internal rearrangement of the electric field or current density distribution. The book is aimed at the semiconductor device physicist, engineer, and graduate student. A knowledge of solid state physics on an elementary or introductory level is assumed. Furthermore, we have geared the book to device engineers and physicists desirous of obtaining an understanding substantially deeper than that associated with a small signal equivalent circuit approach. We focus on both analytical and numerical treatment of specific device problems, concerning ourselves with the mechanism that determines the constitutive relation governing the device, the boundary conditions (contact effects), and the effect of the local circuit environment. |
المحتوى
Introduction | 1 |
Stability | 71 |
Tunnel Diodes | 147 |
The Avalanche Diode | 179 |
The Gunn Diode | 213 |
Superconducting Junctions | 325 |
SNDC Multilayer Semiconductor Structures | 359 |
Thermal and Electrothermal Instabilities | 393 |
List of Pertinent Symbols | 449 |
465 | |
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عبارات ومصطلحات مألوفة
applied approximation assume average band becomes behavior bias bifurcation boundary conditions calculations carrier cathode Chap characteristic charge circuit component concentration conductivity consider constant corresponding current density curve cycle decreases density dependence depletion determined device differential diode discussed distribution domain effects electric field electron element energy equal equation et al example FIGURE filament flow frequency given Grubin heat holes important increases inhomogeneous injection instability ionization junction layer leads length limit load material negative NNDC Note observed obtain occur oscillations parameters phase positive possible potential present produced profiles reached region relation represents resistance sample semiconductor Shaw shown in Fig shows SNDC solutions space stable steady structure sufficiently switching temperature term thermal threshold trajectory transfer transient transit traps tunneling uniform valley voltage yields zero